Reaction chemistry in the afterglow of an oxygen-helium, atmospheric-pressure plasma

被引:185
作者
Jeong, JY
Park, J
Henins, I
Babayan, SE
Tu, VJ
Selwyn, GS
Ding, G
Hicks, RF [1 ]
机构
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA
关键词
D O I
10.1021/jp0012449
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The reaction chemistry in the afterglow of a non-equilibrium, capacitive discharge, operated at 600 Torr total pressure with (0.5 to 5.0) x 10(17) cm(-3) of oxygen in helium, has been examined by ultraviolet absorption spectroscopy, optical emission spectroscopy, and numerical modeling. The densities of the active species, O(P-3), O-2((1)Delta(g)), O-2((1)Sigma(g)(+)), and O-3, have been determined as a function of the operating conditions. At RF power densities between 6.1 and 30.5 W/cm(3) and a neutral temperature of 100 +/- 40 degrees C, the plasma generated (0.2 to 1.0) x 10(16) cm(-3) of O(P-3) and O-2((1)Delta(g)), (0.2 to 2.0) x 10(15) cm(-3) of O-2((1)Sigma(g)(+)), and (0.1 to 4.0) x 10(15) cm(-3) of O-3. After the power was turned off, the singlet-sigma and singlet-delta states decayed within 0.1 and 30.0 Ins, respectively. The concentration of oxygen atoms remained constant for about 0.5 ms, then fell rapidly due to recombination with O-2 to form O-3. It was found that the etching rate of polyimide correlated with the concentration of oxygen atoms in the afterglow, indicating that the O atoms were the active species involved in this process.
引用
收藏
页码:8027 / 8032
页数:6
相关论文
共 30 条
[1]  
[Anonymous], 1953, ANN PHYS, DOI DOI 10.1051/ANPHYS/195312080709
[2]   Deposition of silicon dioxide films with an atmospheric-pressure plasma jet [J].
Babayan, SE ;
Jeong, JY ;
Tu, VJ ;
Park, J ;
Selwyn, GS ;
Hicks, RF .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (03) :286-288
[3]   EVALUATED KINETIC AND PHOTOCHEMICAL DATA FOR ATMOSPHERIC CHEMISTRY .1. CODATA TASK GROUP ON CHEMICAL-KINETICS [J].
BAULCH, DL ;
COX, RA ;
CRUTZEN, PJ ;
HAMPSON, RF ;
KERR, JA ;
TROE, J ;
WATSON, RT .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1982, 11 (02) :327-496
[4]  
BIONDI MA, 1976, PRINCIPLES LASER PLA, pCH4
[5]   QUENCHING OF SINGLET MOLECULAR-OXYGEN, O-2(A 1-DELTA-G) AND O-2(B 1-SIGMA-G+), BY H2, D2, HCL AND HBR [J].
BORRELL, P ;
RICHARDS, DS .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1989, 85 :1401-1411
[6]  
Bortner M H, 1972, DEFENSE NUCL AGENCY
[7]  
Brake M., 1983, Plasma Chemistry and Plasma Processing, V3, P63, DOI 10.1007/BF00566028
[8]  
Braun A. E., 1999, Semiconductor International, V22, P64
[9]   CHEMICAL KINETIC DATA SHEETS FOR HIGH-TEMPERATURE CHEMICAL-REACTIONS [J].
COHEN, N ;
WESTBERG, KR .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1983, 12 (03) :531-590
[10]   ABSOLUTE RATE CONSTANT DETERMINATIONS FOR DEACTIVATION OF O(D-1) BY TIME RESOLVED DECAY OF O(D-1)-]O(P-3) EMISSION [J].
DAVIDSON, JA ;
SADOWSKI, CM ;
SCHIFF, HI ;
STREIT, GE ;
HOWARD, CJ ;
JENNINGS, DA ;
SCHMELTEKOPF, AL .
JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (01) :57-62