Investigation of dwell-time effects on the cobalt disilicide formation using focused ion beam implantation

被引：9

作者：

Hausmann, S ^{[1
]}

Bischoff, L ^{[1
]}

Teichert, J ^{[1
]}

Grambole, D ^{[1
]}

Herrmann, F ^{[1
]}

Moller, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00053-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of dwell-time effects on the formation of CoSi2 layers was investigated. The layers were produced on Si(111) and Si(100) by ion beam synthesis using a focused ion beam system The experiments show that the dwell-time has a strong influence on the formation process of the cobalt disilicide films. In order lo obtain high quality films suitable for applications short dwell-times (about 1 mu s) are necessary.

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页码：233 / 236

页数：4

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