MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)

被引：54

作者：

Bchir, OJ

Johnston, SW

Cuadra, AC

Anderson, TJ

Ortiz, CG

Brooks, BC

Powell, DH

McElwee-White, L

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem, Gainesville, FL 32611 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 249卷 / 1-2期

关键词：

metalorganic chemical vapor deposition; thin films; nitrides; diffusion barrier;

D O I：

10.1016/S0022-0248(02)02145-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of tungsten nitride (WNN) were deposited by MOCVD from the single-source precursor Cl-4(CH3CN)W((NPr)-Pr-i). Films were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and cross-section scanning electron microscopy (X-SEM), while the film resistivity was determined by four-point probe. Film growth rates ranged from 10 to 27 Angstrom/min within a temperature range of 450-700degreesC. The apparent activation energy for film growth in the kinetically controlled regime was 0.84 eV. Films grown at temperatures below 500degreesC were amorphous, with minimum film resistivity and sheet resistance of 750 muOmega cm and 47 Omega/square, respectively, occurring for deposition at 450degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：262 / 274

页数：13

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