TICN - A NEW CHEMICAL-VAPOR-DEPOSITED CONTACT BARRIER METALLIZATION FOR SUBMICRON DEVICES

被引：66

作者：

EIZENBERG, M

LITTAU, K

GHANAYEM, S

MAK, A

MAEDA, Y

CHANG, M

SINHA, AK

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 19期

关键词：

D O I：

10.1063/1.112693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices. (C) 1994 American Institute of Physics.

引用

页码：2416 / 2418

页数：3

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