Surface transformation and inversion domain boundaries in gallium nitride nanorods

被引：16

作者：

Xiao, Pan ^{[1
]}

Wang, Xu ^{[2
]}

Wang, Jun ^{[2
]}

Ke, Fujiu ^{[1
,2
]}

Zhou, Min ^{[3
,4
]}

Bai, Yilong ^{[1
]}

机构：

[1] LMN, Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China

[2] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China

[3] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

[4] Seoul Natl Univ, Sch Mech & Aerosp Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

domain boundaries; gallium compounds; III-V semiconductors; molecular dynamics method; nanostructured materials; semiconductor epitaxial layers; solid-state phase transformations; surface phase transformations; wide band gap semiconductors; PRESSURE PHASE-TRANSITION; MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; GAN NANORODS; WURTZITE; BLUE; PHOTOLUMINESCENCE; SEMICONDUCTORS;

D O I：

10.1063/1.3268467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

引用

页数：3

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