Electronic excitations in beryllium chalcogenides from the ab initio GW approach

被引:65
作者
Fleszar, A [1 ]
Hanke, W [1 ]
机构
[1] Univ Wurzburg, Inst Theoret Phys, D-97074 Wurzburg, Germany
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 04期
关键词
D O I
10.1103/PhysRevB.62.2466
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The one-electron excitation spectrum in BeTe, BeSe, and BeS bulk has been calculated within the ab initio GW approach. Band structures for interacting electrons are presented together with quasiparticle lifetimes and their inelastic mean free paths. The excitation-energy dependence of self-energy shifts and the rate of electronic dissipation processes is studied in detail.
引用
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页码:2466 / 2474
页数:9
相关论文
共 31 条
  • [1] The GW method
    Aryasetiawan, F
    Gunnarsson, O
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (03) : 237 - 312
  • [2] Aulbur WG, 2000, SOLID STATE PHYS, V54, P1
  • [3] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
    BACHELET, GB
    HAMANN, DR
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
  • [4] Inelastic lifetimes of hot electrons in real metals
    Campillo, I
    Pitarke, JM
    Rubio, A
    Zarate, E
    Echenique, PM
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (11) : 2230 - 2233
  • [5] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
    CEPERLEY, DM
    ALDER, BJ
    [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
  • [6] Spectral properties of quasiparticles in a semiconductor
    Fleszar, A
    Hanke, W
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10228 - 10232
  • [7] FRIEHLINGHAUS D, 1997, THESIS FORSCHUNGSZEN
  • [8] SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS
    GODBY, RW
    SCHLUTER, M
    SHAM, LJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10159 - 10175
  • [9] ANGLE-RESOLVED UV PHOTOEMISSION AND ELECTRONIC BAND STRUCTURES OF THE LEAD CHALCOGENIDES
    GRANDKE, T
    LEY, L
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 3847 - 3871
  • [10] SELF-CONSISTENT HARTREE-FOCK AND SCREENED-EXCHANGE CALCULATIONS IN SOLIDS - APPLICATION TO SILICON
    GYGI, F
    BALDERESCHI, A
    [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 4405 - 4408