Electronic excitations in beryllium chalcogenides from the ab initio GW approach

被引：65

作者：

Fleszar, A ^{[1
]}

Hanke, W ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Theoret Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.62.2466

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The one-electron excitation spectrum in BeTe, BeSe, and BeS bulk has been calculated within the ab initio GW approach. Band structures for interacting electrons are presented together with quasiparticle lifetimes and their inelastic mean free paths. The excitation-energy dependence of self-energy shifts and the rate of electronic dissipation processes is studied in detail.

引用

页码：2466 / 2474

页数：9