Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening

被引:37
作者
Senz, V [1 ]
Ihn, T
Heinzel, T
Ensslin, K
Dehlinger, G
Grützmacher, D
Gennser, U
机构
[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
关键词
D O I
10.1103/PhysRevLett.85.4357
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We find that temperature dependent screening can quantitatively explain the metallic behavior of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behavior which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi liquid describes our system with its large interaction parameter r(s) approximate to 8.
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页码:4357 / 4360
页数:4
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