Low-temperature wafer-scale production of ZnO nanowire arrays

被引：1673

作者：

Greene, LE ^{[1
]}

Law, M ^{[1
]}

Goldberger, J ^{[1
]}

Kim, F ^{[1
]}

Johnson, JC ^{[1
]}

Zhang, YF ^{[1
]}

Saykally, RJ ^{[1
]}

Yang, PD ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Dept Chem, Berkeley, CA 94720 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2003年 / 42卷 / 26期

关键词：

electron microscopy; nanowires; oxides; photoluminescence; zinc;

D O I：

10.1002/anie.200351461

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Homogeneous and dense arrays of ZnO nanowires were synthesized on silicon wafers (and many other substrates) using a mild solution process at 90°C. Uniform ZnO nanocrystals were deposited to act as seeds for subsequent hydrothermal nanowire growth, which yielded single-crystalline ZnO nanowires grown along the [0001] direction and oriented perpendicular to the water surface (see picture; scale bar = 1 μm). The photoluminescence and lasing behavior of the arrays has been studied as a function of annealing treatment conditions.

引用

页码：3031 / 3034

页数：4

共 24 条

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