Microstructure of polysilicon films grown by catalytic chemical vapor deposition method

被引：8

作者：

He, AQ ^{[1
]}

Heya, A ^{[1
]}

Otsuka, N ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] Japan Inst Sci & Technol, Tatsunokuchi, Ishikawa 92312, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

cat-CVD; poly-Si; TEM; microstructure; grain boundary;

D O I：

10.1143/JJAP.37.92

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The catalytic chemical vapor deposition (cat-CVD), often called "hot-wire CVD", is a new method of growing polycrystalline silicon (poly-Si) films at low temperatures. The microstructure of such cat-CVD poly-Si films is investigated by high-resolution transmission electron microscopy. The main microstructural features of these poly-Si films are nanometer-diameter columnar crystalline grains surrounded by a very thin amorphous phase. Good electrical properties, such as large carrier mobilities of the films, may be attributed to this microstructure.

引用

页码：92 / 93

页数：2

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