Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

被引：6

作者：

Cheng, TS

Foxon, CT

Jenkins, LC

Hooper, SE

Orton, JW

Novikov, SV

Popova, TB

Tretyakov, VV

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND

[3] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 158卷 / 04期

关键词：

D O I：

10.1016/0022-0248(95)00551-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Films of Ga(AsN) and Al(AsN) have been grown using a modified molecular beam epitaxy method. In both cases the concentration of nitrogen incorporated is directly proportional to the amount of active nitrogen reaching the sample surface. For the Ga(AsN) samples we present evidence that phase separation occurs into nitrogen doped GaAs and arsenic doped GaN regions with a grain size of less than 3 mu m.

引用

页码：399 / 402

页数：4

共 9 条

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