Gallium nitride based materials and their application for light emitting devices

被引：9

作者：

Keller, S ^{[1
]}

Denbaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept ECE, Santa Barbara, CA 93106 USA

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1998年 / 3卷 / 01期

关键词：

D O I：

10.1016/S1359-0286(98)80064-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There have recently been breakthroughs in the growth of group-III nitrides for high efficiency blue and green GaN light emitting diodes and laser diodes. GaN LEDs complete the primary color spectrum and have enabled the fabrication of bright and reliable full-color solid state displays.

引用

页码：45 / 50

页数：6

共 44 条

[41] Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy [J].

Usui, A ;

Sunakawa, H ;

Sakai, A ;

Yamaguchi, AA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B) :L899-L902

[42]

WEEKS TW, 1995, APPL PHYS LETT, V67, P401, DOI 10.1063/1.114642

[43] Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Kozodoy, P ;

Denbaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440

[44] PHOTOLUMINESCENCE OF INGAN FILMS GROWN AT HIGH-TEMPERATURE BY METALORGANIC VAPOR-PHASE EPITAXY [J].

YOSHIMOTO, N ;

MATSUOKA, T ;

SASAKI, T ;

KATSUI, A .

APPLIED PHYSICS LETTERS, 1991, 59 (18) :2251-2253

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