Type-II and type-I interband cascade lasers

被引：156

作者：

Meyer, JR

Vurgaftman, I

Yang, RQ

RamMohan, LR

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

[2] WORCESTER POLYTECH INST,WORCESTER,MA 01609

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 01期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19960064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose two novel sources emitting in the mid-IR: type-II and type-I interband cascade lasers, and perform detailed gain calculations. High radiative efficiencies are expected, since the phonon processes which dominate relaxation in the intersubband quantum cascade laser are effectively eliminated.

引用

页码：45 / 46

页数：2

共 6 条

[1] VERTICAL TRANSITION QUANTUM CASCADE LASER WITH BRAGG CONFINED EXCITED-STATE
FAIST, J
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[2] THEORETICAL PERFORMANCE OF INAS/INXGA1-XSB SUPERLATTICE-BASED MIDWAVE INFRARED-LASERS
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[4] TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED
MEYER, JR
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[J]. APPLIED PHYSICS LETTERS, 1995, 67 (06) : 757 - 759
[5] INFRARED-LASER BASED ON INTERSUBBAND TRANSITIONS IN QUANTUM-WELLS
YANG, RQ
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (01) : 77 - 83
[6] AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES
YOUNGDALE, ER
MEYER, JR
HOFFMAN, CA
BARTOLI, FJ
GREIN, CH
YOUNG, PM
EHRENREICH, H
MILES, RH
CHOW, DH
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (23) : 3160 - 3162

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