Performance comparison of wide bandgap semiconductor rf power devices

Impressive radio frequency power performance has; been demonstrated by three radically different wide bandgap semiconductor power devices, SiC metal semiconductor field effect transistors (MESFETs), SiC static induction transistors (SITs), and AlGaN heterojunction field effect transistors (HFETs). AlGaN HFETs have achieved the highest f(max) of 97 GHz. 4H-SiC MESFETs have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SITs have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover, a one kilowatt, 600 MHz SiC power module containing four multi-cell SITs with a total source periphery of 94.5 cm has been demonstrated.