Barrier-height imaging of oxygen-adsorbed Si(111) 7x7 surfaces

被引：19

作者：

Kurokawa, S

Yuasa, M

Sakai, A ^{[1
]}

Hasegawa, Y

机构：

[1] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

STM; barrier height; local work function; Si(111) 7x7; oxygen adsorption;

D O I：

10.1143/JJAP.36.3860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Barrier-height imaging with scanning tunnelimg microscopy (STM) is applied to the study of oxygen adsorption on a Si(lll) 7 x 7 surface. On clean surfaces, atomic resolution is obtained in the barrier-height mode, as expected for corrugated surfaces. Upon exposure to oxygen, the barrier height phi is found to increase at the oxygen-reacted sites. The dark sites show a greater increase in phi than the bright sites, indicating more charge transfer at the dark sites.

引用

收藏

页码：3860 / 3863

页数：4

相关论文

共 15 条

[1] ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].

AVOURIS, P ;

LYO, IW ;

BOZSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :424-430

[2]

BINNIG G, 1986, IBM J RES DEV, V30, P355

[3]

BINNIG G, 1984, P 17 INT C PHYS SEM, P3

[4]

CHEN CJ, 1991, J VAC SCI TECHNOL A, V9, P230

[5] New model of the initial stages of Si(111)-(7x7) oxidation [J].

Dujardin, G ;

Mayne, A ;

Comtet, G ;

Hellner, L ;

Jamet, M ;

LeGoff, E ;

Millet, P .

PHYSICAL REVIEW LETTERS, 1996, 76 (20) :3782-3785

[6] ATOMIC ARRANGEMENT OF SULFUR ADATOMS ON MO(001) AT ATMOSPHERIC-PRESSURE - A SCANNING TUNNELING MICROSCOPY STUDY [J].

MARCHON, B ;

BERNHARDT, P ;

BUSSELL, ME ;

SOMORJAI, GA ;

SALMERON, M ;

SIEKHAUS, W .

PHYSICAL REVIEW LETTERS, 1988, 60 (12) :1166-1169

[7] Molecularly adsorbed oxygen species on Si(111)-(7x7): STM-induced dissociative attachment studies [J].

Martel, R ;

Avouris, P ;

Lyo, IW .

SCIENCE, 1996, 272 (5260) :385-388

[8] SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF THERMAL OXIDE-GROWTH ON SI(111)7X7 SURFACES [J].

ONO, Y ;

TABE, M ;

KAGESHIMA, H .

PHYSICAL REVIEW B, 1993, 48 (19) :14291-14300

[9] SUCCESSIVE OXIDATION STAGES AND ANNEALING BEHAVIOR OF THE SI(111) 7X7 SURFACE OBSERVED WITH SCANNING TUNNELING MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY [J].

PELZ, JP ;

KOCH, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :775-778

[10] A THEORETICAL-STUDY OF THE INITIAL-STAGES OF SI(111)-7X7 OXIDATION .2. THE DISSOCIATED STATE AND FORMATION OF SIO4 [J].

SCHUBERT, B ;

AVOURIS, P ;

HOFFMANN, R .

JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (09) :7606-7612