A dual-band RF front-end for WCDMA and GSM applications

被引:17
作者
Ryynänen, J [1 ]
Kivekäs, K [1 ]
Jussila, J [1 ]
Pärssinen, A [1 ]
Halonen, K [1 ]
机构
[1] Aalto Univ, Elect Circuit Design Lab, Helsinki, Finland
来源
PROCEEDINGS OF THE IEEE 2000 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2000年
关键词
D O I
10.1109/CICC.2000.852643
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
An RF front-end for dual-band, dual-mode operation is presented in this pager. The front-end consumes 22.5 mW from a 1.8 V supply and is designed to be used in direct conversion WCDMA and GSM receivers. The measured noise figure, gain, and IIP3 are 2.3 dB, 39.5 dB, and -19 dBm for GSM and 4.3 dB, 33 dB, and -14.5 dBm for WCDMA, respectively. The front-end has 27 dB gain control range in both systems.
引用
收藏
页码:175 / 178
页数:4
相关论文
共 8 条
[1]   A single-chip 900 MHz CMOS receiver front-end with a high performance low-IF topology [J].
Crols, J ;
Steyaert, MSJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (12) :1483-1492
[2]  
Ken Leong Fong, 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278), P224, DOI 10.1109/ISSCC.1999.759203
[3]   A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems [J].
Long, JR ;
Copeland, MA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (12) :1438-1448
[4]  
PARSSINEN A, 1999, ISSCC, P220
[5]   Design considerations for direct-conversion receivers [J].
Razavi, B .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING, 1997, 44 (06) :428-435
[6]   A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver [J].
Rofougaran, A ;
Chang, JYC ;
Rofougaran, M ;
Abidi, AA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (07) :880-889
[7]   INTEGRATED WIDEBAND VARIABLE-GAIN AMPLIFIER WITH MAXIMUM DYNAMIC RANGE [J].
SANSEN, WMC ;
MEYER, RG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (04) :159-166
[8]  
WU S, 1998, ISSCC, P124