Dynamic modeling of amorphous- and polycrystalline-silicon devices

The materials of which thin-film transistors (TFT's) are fabricated are characterized by a large amount of defects, giving rise to localized states with a complex energy distribution within the gap, As a consequence, the electrical characteristics of TFT's are difficult to model analytically, and a numerical approach may he preferred to predict their performance. A new efficient. method is presented to solve the time-dependent semiconductor equations accounting for energy-distributed gap states. Applications are provided to the analysis of realistic devices and inverters.