Large-area YBCO films for device fabrication

被引：23

作者：

Tian, YJ ^{[1
]}

Linzen, S ^{[1
]}

Schmidl, F ^{[1
]}

Cihar, R ^{[1
]}

Seidel, P ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1998年 / 11卷 / 01期

关键词：

D O I：

10.1088/0953-2048/11/1/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared YBCO thin films by a pulsed laser deposition (PLD) technique on SrTiO3 substrates and on the naturally oxidized 2 in diameter silicon wafers with CeO2/YSZ buffer layers. This large-area film PLD technique allows the preparation of homogeneous and reproducible YBCO films with high quality on classical and technical substrates. For 2 in silicon wafer, we obtained the critical temperature T-co in the range from 87.5 K to 88.2 K and a critical current density J(c)at 77 K of from 0.53 to 1.3 MA cm(-2) over the whole wafer.

引用

页码：59 / 62

页数：4

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