GaAs/Ge solar cell AC parameters at different temperatures

被引：17

作者：

Kumar, RA

Suresh, MS

Nagaraju, J ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

[2] ISRO, ISRO Satellite Ctr, Bangalore 560017, Karnataka, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 77卷 / 02期

关键词：

GaAs/Ge solar cell; AC parameters; temperature;

D O I：

10.1016/S0927-0248(02)00316-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The AC parameters of Gallium Arsenide (GaAs/Ge) solar cell were measured at different cell temperatures (198-348 K) by varying the cell bias voltage (forward and reverse) under dark condition using impedance spectroscopy technique. It was found that the cell capacitance increases with the cell temperature where as the cell resistance decreases, at any bias voltage. The measured cell parameters were used to calculate the intrinsic concentration of electron-hole pair, cell material relative permittivity and its band gap energy. The diode factor and the cell dynamic resistance at the corresponding maximum power point decrease with the cell temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：145 / 153

页数：9

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[3]

Kumar R. A., 2000, THESIS INDIAN I SCI

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