Confinement effects in PbSe quantum wells and nanocrystals

被引:240
作者
Allan, G [1 ]
Delerue, C [1 ]
机构
[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, Dept ISEN, F-59046 Lille, France
关键词
D O I
10.1103/PhysRevB.70.245321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and dots. For PbSe nanocrystals, the luminescence lifetime, the confinement energy, and the intraband optical properties are in good agreement with experiments. The high quantum yield observed experimentally can be explained by the absence of surface dangling bonds in these systems. The origin of the second peak measured in the absorption spectra is discussed, whereas S-P interband transitions exhibit very small oscillator strength. The full frequency-dependent dielectric function epsilon(omega) is calculated for PbSe quantum wells. Its imaginary part epsilon(2)(omega) is strongly anisotropic and shows large variations with respect to its bulk value even far from the gap region.
引用
收藏
页码:1 / 9
页数:9
相关论文
共 44 条
[11]   Low-threshold optically pumped λ=4.4μm vertical-cavity surface-emitting laser with a PbSe quantum-well active region [J].
Felix, CL ;
Bewley, WW ;
Vurgaftman, I ;
Lindle, JR ;
Meyer, JR ;
Wu, HZ ;
Xu, G ;
Khosravani, S ;
Shi, Z .
APPLIED PHYSICS LETTERS, 2001, 78 (24) :3770-3772
[12]   First-principles computation of material properties: the ABINIT software project [J].
Gonze, X ;
Beuken, JM ;
Caracas, R ;
Detraux, F ;
Fuchs, M ;
Rignanese, GM ;
Sindic, L ;
Verstraete, M ;
Zerah, G ;
Jollet, F ;
Torrent, M ;
Roy, A ;
Mikami, M ;
Ghosez, P ;
Raty, JY ;
Allan, DC .
COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :478-492
[13]   ELECTROMAGNETIC-FIELDS AND DIELECTRIC RESPONSE IN EMPIRICAL TIGHT-BINDING THEORY [J].
GRAF, M ;
VOGL, P .
PHYSICAL REVIEW B, 1995, 51 (08) :4940-4949
[14]   PbS quantum-dot doped grasses as saturable absorbers for mode locking of a Cr:forsterite laser [J].
Guerreiro, PT ;
Ten, S ;
Borrelli, NF ;
Butty, J ;
Jabbour, GE ;
Peyghambarian, N .
APPLIED PHYSICS LETTERS, 1997, 71 (12) :1595-1597
[15]  
Harrison W.A., 1980, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond
[16]   Effect of quantum confinement on the dielectric function of PbSe [J].
Hens, Z ;
Vanmaekelbergh, D ;
Kooij, ES ;
Wormeester, H ;
Allan, G ;
Delerue, C .
PHYSICAL REVIEW LETTERS, 2004, 92 (02) :4
[17]   Evolution of the density of states on going from a two- to a zero-dimensional semiconductor [J].
Hens, Z ;
Grandidier, B ;
Deresmes, D ;
Allan, G ;
Delerue, C ;
Stiévenard, D ;
Vanmaekelbergh, D .
EUROPHYSICS LETTERS, 2004, 65 (06) :809-815
[18]   Electronic structure and optical properties of PbS and PbSe quantum dots [J].
Kang, I ;
Wise, FW .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1997, 14 (07) :1632-1646
[19]   ELECTRONIC BAND-STRUCTURE AND OPTICAL PROPERTIES OF PBTE, PBSE, AND PBS [J].
KOHN, SE ;
YU, PY ;
PETROFF, Y ;
SHEN, YR ;
TSANG, Y ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (04) :1477-1488
[20]   Electronic structure calculations of lead chalcogenides PbS, PbSe, PbTe [J].
Lach-hab, M ;
Papaconstantopoulos, DA ;
Mehl, MJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (05) :833-841