Room temperature two-terminal characteristics in silicon nanowires

被引：15

作者：

Hu, SF

Wong, WZ

Liu, SS

Wu, YC

Sung, CL

Huang, TY

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 06期

关键词：

nanostructures; nanofabrications; tunnelling;

D O I：

10.1016/S0038-1098(02)00807-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured, on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. (C) 2003 Elsevier Science Ltd. All rights reserved

引用

页码：351 / 354

页数：4