High temperature, high voltage operation of diamond Schottky diode

被引：66

作者：

Vescan, A ^{[1
]}

Daumiller, I ^{[1
]}

Gluche, P ^{[1
]}

Ebert, W ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] Univ Ulm, Dept Elect Devices & Circuits, D-89081 Ulm, Germany

来源：

关键词：

diamond Schottky diode; high temperature; high voltage;

D O I：

10.1016/S0925-9635(97)00200-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Very high temperature operation of homoepitaxial diamond Schottky diodes is demonstrated with rectifying behaviour up to 800 degrees C. The Schottky material is p(+)-Si with a chemically stabilized Si-diamond interface, leading to significantly reduced thermal activation of the reverse currents. On diamond films with low surface doping concentration 150 V breakdown voltage at room temperature is observed. (C) 1998 Elsevier Science S.A.

引用

页码：581 / 584

页数：4

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