Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping

被引：56

作者：

Du, Yuchen ^{[1
]}

Yang, Lingming ^{[1
]}

Zhou, Hong ^{[1
]}

Ye, Peide D. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Black phosphorus; contact resistance; MOSFET; phosphorene; semiconductor device doping; SEMICONDUCTOR; AIR;

D O I：

10.1109/LED.2016.2535905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported levels. By applying 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), low ON-state resistance of 3.2 Omega . mm and high field-effect mobility of 229 cm(2)/Vs are achieved with a record high drain current of 532 mA/mm at a moderate channel length of 1.5 mu m.

引用

页码：429 / 432

页数：4

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