Ion beam synthesis of β-FeSi2

被引：17

作者：

Daraktchieva, V

Baleva, M

Goranova, E

Angelov, C

机构：

[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

[2] BAS, Cent Lab Solar & New Energy Sources, Sofia 1784, Bulgaria

[3] BAS, Inst Nucl Phys & Energy, Sofia 1784, Bulgaria

来源：

VACUUM | 2000年 / 58卷 / 2-3期

关键词：

Burstein-Moss effect - Ion beam synthesis (IBS) - Iron silicide;

D O I：

10.1016/S0042-207X(00)00199-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The beta-FeSi2 phase was fabricated using ion beam synthesis with high doses of implantation followed by rapid thermal annealing. A direct band gap with an energy E-g = 0.85 eV was determined from the transmittance and reflectance spectra of implanted Si wafers accounting for the Burstein-Moss effect. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：415 / 419

页数：5

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