Delay-time and aging effects on contrast and sensitivity of hydrogen silsesquioxane

被引:42
作者
van Delft, FCMJM [1 ]
机构
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词
D O I
10.1116/1.1524980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
3Hydrogen silsesquioxane (HSQ) has been shown to behave as a negative tone inorganic e-beam resist with a resolution better than 20 nm established. In this article, delay-time and aging effects on contrast and sensitivity have been investigated. The effect of a 1 week delay in air between softbake and exposure is much larger than either the aging effect or the effect of the softbake temperature. A pre-exposure delay in air seems to decrease the sensitivity and to enhance the contrast of HSQ. A general correlation between sensitivity and contrast has been established for various pre-exposure and postexposure treatments for 20, 50, and 100 kV exposures. The possible causes for the various delay-time effects are discussed. (C) 2002 American Vacuum Society.
引用
收藏
页码:2932 / 2936
页数:5
相关论文
共 5 条
[1]   Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system [J].
Maile, BE ;
Henschel, W ;
Kurz, H ;
Rienks, B ;
Polman, R ;
Kaars, P .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (12B) :6836-6842
[2]   Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations [J].
Namatsu, H ;
Yamaguchi, T ;
Nagase, M ;
Yamazaki, K ;
Kurihara, K .
MICROELECTRONIC ENGINEERING, 1998, 42 :331-334
[3]   Supercritical resist drying for isolated nanoline formation [J].
Namatsu, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2709-2712
[4]   Hydrogen SilsesQuioxane, a high-resolution negative tone e-beam resist, investigated for its applicability in photon-based lithographies [J].
Peuker, M ;
Lim, MH ;
Smith, HI ;
Morton, R ;
van Langen-Suurling, AK ;
Romijn, J ;
van der Drift, EWJM ;
van Delft, FCMJM .
MICROELECTRONIC ENGINEERING, 2002, 61-2 :803-809
[5]   Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography [J].
van Delft, FCMJM ;
Weterings, JP ;
van Langen-Suurling, AK ;
Romijn, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3419-3423