Midwave (3-4 mu m) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors

被引：11

作者：

Aidaraliev, M

Zotova, NV

Karandashov, SA

Matveev, BA

Stus, NM

Talalakin, GN

机构：

[1] A.F. Ioffe Phys.-Technical Institute, Academy of Sciences of Russia, St. Petersburg 194021

来源：

INFRARED PHYSICS & TECHNOLOGY | 1996年 / 37卷 / 01期

关键词：

D O I：

10.1016/S1350-4495(97)80764-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Double heterostructure InAsSbP/In1-xGaxAs1-ySbx diode lasers emitting at 3.05-3.6 mu m have been fabricated by liquid phase epitaxy. These devices exhibit high external efficiency (10-15% at 77 K) and output power up to 15 mW and can be used to make infrared methane fibre optic sensors. Temperature tuning of the laser emission line, e.g. over 3.28-3.34 mu m range (the corresponding temperature range is 78-136 K), can be utilized in fibre optic spectroscopic instrumentation.

引用

页码：83 / 86

页数：4

共 7 条

[1]

AIDARALIEV M, 1993, SEMICOND SCI TECH, V8, P1575

[2]

ARGUNOVA TS, 1994, IN PRESS PHYS SOL ST, V36

[3] DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS [J].