Photoluminescence properties of dense InAs/AlInAs quantum wire arrays

被引：10

作者：

Li, HX ^{[1
]}

Daniels-Race, T

Hasan, MA

机构：

[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 216卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0022-0248(00)00459-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-density, nanometer-scale InAs quantum wires are observed on InP (1 0 0) grown by molecular beam epitaxy. The detailed temperature-dependent photoluminescence (PL) properties are studied. The fast redshift of PL peak energy and the monotonic decrease of PL linswidth are observed and explained in terms of carrier relaxation effect, resulting from the efficient carrier transfer from smaller wires into nearby larger ones in coupled system. For the superlattice samples, the effect of spacer thickness on the PL properties was also investigated. Device applications of these quantum structures are very promising, (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：527 / 531

页数：5

共 11 条

[1]

LANDOLTBORNSTEI, 1982, NEW SERIES SEMICON A, V17

[2] Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures [J].

Lee, H ;

Yang, WD ;

Sercel, PC .

PHYSICAL REVIEW B, 1997, 55 (15) :9757-9762

[3] STRUCTURAL AND OPTICAL-PROPERTIES OF SELF-ASSEMBLED INGAAS QUANTUM DOTS [J].

LEONARD, D ;

FAFARD, S ;

POND, K ;

ZHANG, YH ;

MERZ, JL ;

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2516-2520

[4] Exciton localization and temperature stability in self-organized InAs quantum dots [J].

Lubyshev, DI ;

GonzalezBorrero, PP ;

Marega, E ;

Petitprez, E ;

LaScala, N ;

Basmaji, P .

APPLIED PHYSICS LETTERS, 1996, 68 (02) :205-207

[5] STRUCTURAL CHARACTERIZATION OF (IN,GA)AS QUANTUM DOTS IN A GAAS MATRIX [J].

RUVIMOV, S ;

WERNER, P ;

SCHEERSCHMIDT, K ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

EGOROV, AY ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW B, 1995, 51 (20) :14766-14769

[6] Vertically aligned and electronically coupled growth induced InAs islands in GaAs [J].

Solomon, GS ;

Trezza, JA ;

Marshall, AF ;

Harris, JS .

PHYSICAL REVIEW LETTERS, 1996, 76 (06) :952-955

[7]

SOLOMON GS, 1995, P 15 MBE C COLL PARK

[8]

TOURNIE E, 1993, SEMICOND SCI TECH, V8, P236

[9] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].

VARSHNI, YP .

PHYSICA, 1967, 34 (01) :149-&

[10] In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates [J].

Xu, HZ ;

Zhou, W ;

Xu, B ;

Jiang, WH ;

Gong, Q ;

Ding, D ;

Wang, ZG .

APPLIED SURFACE SCIENCE, 1999, 141 (1-2) :101-106

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