Effect of Nb, Cr, Sn additions on gas sensing properties of TiO2 thin films

被引：135

作者：

Zakrzewska, K ^{[1
]}

Radecka, M

Rekas, M

机构：

[1] Univ Min & Met, PL-30059 Krakow, Poland

[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia

来源：

THIN SOLID FILMS | 1997年 / 310卷 / 1-2期

关键词：

optical properties; sensors; tin oxide; titanium oxide;

D O I：

10.1016/S0040-6090(97)00401-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of Nb and Cr dopants as well as Sn4+ additions on the electronic structure of rf-sputtered TiO2 thin films and its subsequent influence on gas sensor performance is reported. The changes in the electrical conductivities of TiO2 thin films doped with up to 10 at.% Nb, 4 at.% Cr and TiO2-SnO2 in the full range of compositions upon exposure to hydrogen and oxygen are demonstrated. The spectral dependence of the absorption coefficient in the vicinity of the band gap transition of TiO2 is shown to be affected by doping. (C) 1997 Elsevier Science S.A.

引用

页码：161 / 166

页数：6

共 17 条

[1] ELECTRICAL-PROPERTIES OF CR-DOPED AND NB-DOPED TIO2 THIN-FILMS [J].