Surface potentials of magnetron sputtered transparent conducting oxides

被引:136
作者
Klein, A. [1 ]
Koerber, C. [1 ]
Wachau, A. [1 ]
Saeuberlich, F. [1 ]
Gassenbauer, Y. [1 ]
Schafranek, R. [1 ]
Harvey, S. P. [2 ,3 ]
Mason, T. O. [2 ,3 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
Work function; SnO2; In2O3; ZnO; TCO; Thin film; Magnetron sputtering; Photoemission; INDIUM-TIN-OXIDE; WORK FUNCTION MEASUREMENTS; ZINC-OXIDE; PHOTOELECTRON-SPECTROSCOPY; OXYGEN VACANCIES; IN-SITU; ELECTRONIC-STRUCTURES; KELVIN PROBE; FILMS; ZNO;
D O I
10.1016/j.tsf.2009.05.057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1197 / 1203
页数:7
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