Surface potentials of magnetron sputtered transparent conducting oxides

被引：136

作者：

Klein, A. ^{[1
]}

Koerber, C. ^{[1
]}

Wachau, A. ^{[1
]}

Saeuberlich, F. ^{[1
]}

Gassenbauer, Y. ^{[1
]}

Schafranek, R. ^{[1
]}

Harvey, S. P. ^{[2
,3
]}

Mason, T. O. ^{[2
,3
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 04期

基金：

美国国家科学基金会;

关键词：

Work function; SnO2; In2O3; ZnO; TCO; Thin film; Magnetron sputtering; Photoemission; INDIUM-TIN-OXIDE; WORK FUNCTION MEASUREMENTS; ZINC-OXIDE; PHOTOELECTRON-SPECTROSCOPY; OXYGEN VACANCIES; IN-SITU; ELECTRONIC-STRUCTURES; KELVIN PROBE; FILMS; ZNO;

D O I：

10.1016/j.tsf.2009.05.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1197 / 1203

页数：7

共 80 条

[11] 2-A
[12] PREPARATION OF WELL-ORDERED, OXYGEN-RICH SNO2(110) SURFACES VIA OXYGEN PLASMA TREATMENT
CAVICCHI, R
TARLOV, M
SEMANCIK, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2347 - 2352
[13] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties
Cebulla, R
Wendt, R
Ellmer, K
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 1087 - 1095
[14] Work function changes and surface chemistry of oxygen, hydrogen, and carbon on indium tin oxide
Chaney, JA
Pehrsson, PE
[J]. APPLIED SURFACE SCIENCE, 2001, 180 (3-4) : 214 - 226
[15] High resolution x-ray photoemission study of plasma oxidation of indium-tin-oxide thin film surfaces
Christou, V
Etchells, M
Renault, O
Dobson, PJ
Salata, OV
Beamson, G
Egdell, RG
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5180 - 5187
[16] OXYGEN VACANCIES AND DEFECT ELECTRONIC STATES ON THE SNO2(110)-1X1 SURFACE
COX, DF
FRYBERGER, TB
SEMANCIK, S
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 2072 - 2083
[17] INFLUENCE OF THE SURFACE RECONSTRUCTION ON THE WORK FUNCTION AND SURFACE CONDUCTANCE OF (110)SNO2
DEFRESART, E
DARVILLE, J
GILLES, JM
[J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 637 - 651
[18] Atomic-scale properties of low-index ZnO surfaces
Diebold, U
Koplitz, LV
Dulub, O
[J]. APPLIED SURFACE SCIENCE, 2004, 237 (1-4) : 336 - 342
[19] Characterization of indium-tin oxide interfaces using X-ray photoelectron spectroscopy and redox processes of a chemisorbed probe molecule: Effect of surface pretreatment conditions
Donley, C
Dunphy, D
Paine, D
Carter, C
Nebesny, K
Lee, P
Alloway, D
Armstrong, NR
[J]. LANGMUIR, 2002, 18 (02) : 450 - 457
[20] Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties
Ellmer, K
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) : R17 - R32

← 1 2 3 4 5 6 7 8 →