Vibrational lifetime of bond-center hydrogen in crystalline silicon

被引：92

作者：

Budde, M ^{[1
]}

Lüpke, G

Cheney, CP

Tolk, NH

Feldman, LC

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA

[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.85.1452

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T-1 = 7.8 +/- 0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasing hydrogen concentration C-H, and nearly coincides with the natural width for C-H similar to 1 ppm. The lifetimes of the Si-H stretch modes of selected hydrogen-related defects are estimated from their spectral widths and shown to range from 1.6 to more than 37 ps.

引用

页码：1452 / 1455

页数：4

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