A novel characterization scheme for organic field-effect transistors

被引：14

作者：

Dost, Rene ^{[1
]}

Das, Arindam ^{[1
]}

Grell, Martin ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

POLYMER TRANSISTORS; ELECTRONICS;

D O I：

10.1088/0022-3727/40/12/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a novel organic field-effect transistor (OFET) characterization scheme that allows for the rapid measurement of both, mobility and threshold voltage, in OFETs. The scheme uses a simple measurement algorithm and is based on cheap, standard electronic components. Results agree excellently with conventional characterization, even for moderate mobilities. The algorithm can be easily automated, which is believed to make it the method of choice where fast response is required, e.g. when OFETs are used as sensors.

引用

页码：3563 / 3566

页数：4

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