Flexible high capacitance gate insulators for organic field effect transistors

被引：48

作者：

Majewski, LA ^{[1
]}

Schroeder, R ^{[1
]}

Grell, M ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2004年 / 37卷 / 01期

关键词：

D O I：

10.1088/0022-3727/37/1/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have manufactured flexible field effect transistors with both polymeric and low molecular weight organic semiconductors onto a very thin (6.5 nm) gate insulator with capacitance in excess of 600 nF cm(-2). Gate insulators were prepared by anodization of a sputtered aluminium film on a Mylar plastic sheet. Anodization protocols in very dilute acid and in pure water, were explored and results compared.

引用

页码：21 / 24

页数：4

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