Application of anodization to reoxidize silicon nitride film

被引：2

作者：

Lin, YP ^{[1
]}

Hwu, JG ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 12期

关键词：

anodization; anodic reoxidation; nitride; XPS;

D O I：

10.1143/JJAP.40.6788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anodic reoxidation of ultrathin Si3N4 film in deionized (DI) water followed by rapid thermal annealing (RTA) in N-2 (ANO) was for the first time studied in this work. The Si3N4 film directly reoxidized in O-2 by RTA (O(2)RTA) was used fur comparison. It was found that the reoxidation process could significantly improve the characteristics of clicinical-vapor-deposited (CVD) Si3N4 in terms of both the interface and bulk qualities. The ANO samples show lower leakage cur-rent, lower interface trap and bulk trap densities, and higher breakdown field than O(2)RTA of the same equivalent oxide thickness (EOT). The better electrical characteristics of ANO are due to more oxygen atoms incorporated into the Si3N4 films during the anodic reoxidation.

引用

页码：6788 / 6791

页数：4

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