EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT

被引：82

作者：

BHAT, M ^{[1
]}

YOON, GW ^{[1
]}

KIM, J ^{[1
]}

KWONG, DL ^{[1
]}

ARENDT, M ^{[1
]}

WHITE, JM ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of NH3 nitridation on the chemical and electrical properties of N2O oxides have been studied. Compared with NH3-nitrided SiO2, NH3 nitridation does not degrade the electrical properties of N2O oxides, thus resulting in superior impurity diffusion barrier properties, while preserving excellent interface immunity to hot-carrier injection and much lower charge trapping. Correlation studies between the chemical and electrical properties of NH3-nitrided N2O and NH3-nitrided SiO2 have been done to explain these results.

引用

页码：2116 / 2118

页数：3

共 13 条

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