IMPROVEMENT OF CHARGE TRAPPING CHARACTERISTICS OF N2O-ANNEALED AND REOXIDIZED N2O-ANNEALED THIN OXIDES

被引：33

作者：

LIU, ZH ^{[1
]}

WANN, HJ ^{[1
]}

KO, PK ^{[1
]}

HU, CM ^{[1
]}

CHENG, YC ^{[1
]}

机构：

[1] CITY POLYTECH HONG KONG,DIRECTORATE,HONG KONG,HONG KONG

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期

关键词：

D O I：

10.1109/55.192820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is found that increasing N2O annealing temperature and time monotonically reduces electron trapping in the resulting oxides. The improvement increases with oxide thickness. Reoxidation does not enhance but reduces the improvement. The behavior is different from and simpler to understand than that after NH3 annealing, apparently due to the absence of deleterious hydrogen. Hole trapping and interface trap generation are also suppressed by N2O annealing, though an optimum anneal condition may exist. Charge to breakdown exhibits modest improvement consistent with reduced electron trapping.

引用

页码：519 / 521

页数：3

共 9 条

[1] FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS [J].

AHN, J ;

TING, W ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) :117-119

[2] ELECTRICAL AND PHYSICAL-PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING [J].

HORI, T ;

IWASAKI, H ;

TSUJI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :340-350

[3]

Hwang H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P421, DOI 10.1109/IEDM.1990.237142

[4]

LIANG MS, 1984, IEEE T ELECTRON DEV, V31, P1238, DOI 10.1109/T-ED.1984.21694

[5] CHARACTERIZATION OF CHARGE TRAPPING AND HIGH-FIELD ENDURANCE FOR 15-NM THERMALLY NITRIDED OXIDES [J].

LIU, ZH ;

LAI, PT ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :344-354

[6] EFFECTS OF N2O ANNEAL AND REOXIDATION ON THERMAL OXIDE CHARACTERISTICS [J].

LIU, ZH ;

WANN, HJ ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (08) :402-404

[7] FIELD AND TEMPERATURE ACCELERATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN FOR REOXIDIZED-NITRIDED AND FLUORINATED OXIDES [J].

LIU, ZH ;

NEE, P ;

KO, PK ;

HU, CM ;

SODINI, CG ;

GROSS, BJ ;

MA, TP ;

CHENG, YC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) :41-43

[8]

Uchiyama A., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P425, DOI 10.1109/IEDM.1990.237141

[9] GATE BIAS POLARITY DEPENDENCE OF CHARGE TRAPPING AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN IN NITRIDED AND REOXIDIZED NITRIDED OXIDES [J].

WU, AT ;

MURALI, V ;

NULMAN, J ;

TRIPLETT, B ;

FRASER, DB ;

GARNER, M .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :443-445

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