THERMAL NITRIDATION OF SIO2 THIN-FILMS ON SI AT 1150-DEGREES-C

被引：37

作者：

KOBA, R

TRESSLER, RE

机构：

[1] Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 01期

关键词：

D O I：

10.1149/1.2095541

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

47

引用

收藏

页码：144 / 150

页数：7

相关论文

共 47 条

[1] [Anonymous], INSTRUCTION MANUAL
[2] BROW RK, 1984, J AM CERAM SOC, V67, pC72, DOI 10.1111/j.1151-2916.1984.tb18834.x
[3] HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS
CHANG, CC
KAMGAR, A
KAHNG, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 476 - 478
[4] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
JOHNSON, NM
LYON, SA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 316 - 318
[5] CHARACTERIZATION OF SILICON-OXYNITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CVD
CLAASSEN, WAP
VANDERPOL, HAJT
GOEMANS, AH
KUIPER, AET
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1458 - 1464
[6] DUFFALO J, 1984, THESIS PENNSYLVANIA
[7] GAT A, 1985, SEMICONDUCTOR IN MAY, P120
[8] INVESTIGATION OF THERMAL OXIDE-FILMS OF SILICON BY INFRARED-ABSORPTION
GOPAL, V
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02): : 783 - &
[9] TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA
HAN, CJ
MOSLEHI, MM
HELMS, CR
SARASWAT, KC
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 641 - 643
[10] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS
HARTSTEIN, A
YOUNG, DR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 631 - 633

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