NOVEL N2O-OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE EEPROM TUNNEL OXIDE-FILMS

被引：96

作者：

FUKUDA, H

YASUDA, M

IWABUCHI, T

OHNO, S

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Company Ltd., Hachioji, Tokyo 193, 550-5, Higashiasakawa

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin (congruent-to 6 nm) oxynitrided SiO2 (SiOxNy) films have been formed on Si(100) by rapid thermal processing (RTP) in an N2O ambient. We have demonstrated that by this technology the generation of electron traps in bulk SiO2 and the low-field leakage during Fowler-Nordheim electron injection can be greatly reduced. This behavior of SiOxNy film can be explained by the idea that the trap sites are reduced by forming strong Si-N bonds in bulk SiO2. This N2O oxynitridation is viewed as a hopeful technology for forming ultrathin EEPROM tunnel oxide films.

引用

页码：587 / 589

页数：3

共 14 条

[1] AJIKA N, 1990, 22ND 1990 INT C SOL, P171
[2] Aritome S., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P111, DOI 10.1109/IEDM.1990.237214
[3] Baglee D. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P624
[4] THERMAL NITRIDATION OF SI(100)-2X1 SURFACE BY NH3 - XPS RESULTS
BISCHOFF, JL
KUBLER, L
BOLMONT, D
[J]. SURFACE SCIENCE, 1989, 209 (1-2) : 115 - 130
[5] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
FUKUDA, H
ARAKAWA, T
OHNO, S
[J]. ELECTRONICS LETTERS, 1990, 26 (18) : 1505 - 1506
[6] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
FUKUDA, H
ARAKAWA, T
OHNO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2333 - L2336
[7] ELECTRICAL-PROPERTIES OF THIN OXYNITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
FUKUDA, H
YASUDA, M
OHNO, S
[J]. ELECTRONICS LETTERS, 1991, 27 (05) : 440 - 441
[8] ELECTRICAL AND PHYSICAL-PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING
HORI, T
IWASAKI, H
TSUJI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 340 - 350
[9] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS
ITO, T
NAKAMURA, T
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502
[10] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

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