ELECTRICAL-PROPERTIES OF THIN OXYNITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT

被引：10

作者：

FUKUDA, H

YASUDA, M

OHNO, S

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 05期

关键词：

THIN FILMS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; ANNEALING;

D O I：

10.1049/el:19910278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimisation of reaction temperature and time has been made in the oxynitridation of SiO2 in N2O by evaluating its dielectric properties at a constant current stress. It is found that N2O-oxynitrided SiO2 films are much improved in both charge trapping density and charge to breakdown when the optimum oxynitridation process (O2, 1100-degrees-C, 5 s and following N2O, 1200-degrees-C, 25 s) is chosen.

引用

页码：440 / 441

页数：2

共 11 条

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