CHANNEL HOT-CARRIER STRESSING OF REOXIDIZED NITRIDED SILICON DIOXIDE

被引：65

作者：

DUNN, GJ

SCOTT, SA

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 07期

关键词：

D O I：

10.1109/16.55760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanisms of channel hot-carrier-induced degradation in short n-channel MOSFET's with reoxidized nitrided oxide as the gate dielectric were studied. Charge pumping measurements demonstrate that virtually no interface trap generation occurs in these devices. A three orders of magnitude improvement in device lifetime (versus conventional oxide) is demonstrated. © 1990 IEEE

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页码：1719 / 1726

页数：8

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