Derivatization of porous silicon by Grignard reagents at room temperature

被引:109
作者
Kim, NY [1 ]
Laibinis, PE
机构
[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Chem, Cambridge, MA 02139 USA
关键词
D O I
10.1021/ja9712231
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
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页码:4516 / 4517
页数:2
相关论文
共 14 条
  • [11] ALKYL MONOLAYERS ON SILICON PREPARED FROM 1-ALKENES AND HYDROGEN-TERMINATED SILICON
    LINFORD, MR
    FENTER, P
    EISENBERGER, PM
    CHIDSEY, CED
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (11) : 3145 - 3155
  • [12] LINVIEN D, 1991, HDB INFRARED RAMAN C, pCH17
  • [13] Pouchert C.J., 1985, ALDRICH LIB FT IR SP
  • [14] Electrochemical methoxylation of porous silicon surface
    Warntjes, M
    Vieillard, C
    Ozanam, F
    Chazalviel, JN
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (12) : 4138 - 4142