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Derivatization of porous silicon by Grignard reagents at room temperature
被引:109
作者
:
Kim, NY
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Dept Chem Engn, Cambridge, MA 02139 USA
MIT, Dept Chem Engn, Cambridge, MA 02139 USA
Kim, NY
[
1
]
Laibinis, PE
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Dept Chem Engn, Cambridge, MA 02139 USA
Laibinis, PE
机构
:
[1]
MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[2]
MIT, Dept Chem, Cambridge, MA 02139 USA
来源
:
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
|
1998年
/ 120卷
/ 18期
关键词
:
D O I
:
10.1021/ja9712231
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
引用
收藏
页码:4516 / 4517
页数:2
相关论文
共 14 条
[11]
ALKYL MONOLAYERS ON SILICON PREPARED FROM 1-ALKENES AND HYDROGEN-TERMINATED SILICON
LINFORD, MR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
LINFORD, MR
FENTER, P
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
FENTER, P
EISENBERGER, PM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
EISENBERGER, PM
CHIDSEY, CED
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
CHIDSEY, CED
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1995,
117
(11)
: 3145
-
3155
[12]
LINVIEN D, 1991, HDB INFRARED RAMAN C, pCH17
[13]
Pouchert C.J., 1985, ALDRICH LIB FT IR SP
[14]
Electrochemical methoxylation of porous silicon surface
Warntjes, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Warntjes, M
Vieillard, C
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Vieillard, C
Ozanam, F
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Ozanam, F
Chazalviel, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Chazalviel, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1995,
142
(12)
: 4138
-
4142
←
1
2
→
共 14 条
[11]
ALKYL MONOLAYERS ON SILICON PREPARED FROM 1-ALKENES AND HYDROGEN-TERMINATED SILICON
LINFORD, MR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
LINFORD, MR
FENTER, P
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
FENTER, P
EISENBERGER, PM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
EISENBERGER, PM
CHIDSEY, CED
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT CHEM, STANFORD, CA 94305 USA
CHIDSEY, CED
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1995,
117
(11)
: 3145
-
3155
[12]
LINVIEN D, 1991, HDB INFRARED RAMAN C, pCH17
[13]
Pouchert C.J., 1985, ALDRICH LIB FT IR SP
[14]
Electrochemical methoxylation of porous silicon surface
Warntjes, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Warntjes, M
Vieillard, C
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Vieillard, C
Ozanam, F
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Ozanam, F
Chazalviel, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matiere Condensee, CNRS-École Polytechnique
Chazalviel, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1995,
142
(12)
: 4138
-
4142
←
1
2
→