A mild reduction-phosphidation approach to nanocrystalline GaP

被引：11

作者：

Chen, LY

Luo, T

Huang, MX

Gu, YL

Shi, L

Qian, YT ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Chem, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 10期

关键词：

gallium phosphide; chemical synthesis; transmission electron microscopy; X-ray diffraction;

D O I：

10.1016/j.ssc.2004.09.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nanocrystalline gallium phosphide (Gap) has been prepared through a reduction-phosphidation by using Ga, PCl3 as gallium and phosphorus sources and metallic sodium as reductant at 350degreesC. The XRD pattern can be indexed as cublic GaP with the lattice constant of alpha = 5.446 Angstrom. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP. (C) 2004 Published by Elsevier Ltd.

引用

页码：667 / 671

页数：5

共 16 条

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