Development of front-end electronics and TDC LSI for the ATLAS MDT

被引:39
作者
Arai, Y [1 ]
机构
[1] KEK, Natl High Energy Accelerator Res Org, Inst Particle & Nucl Studies, Tsukuba, Ibaraki, Japan
关键词
ASD; TDC; PLL; radiation damage;
D O I
10.1016/S0168-9002(00)00658-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Architecture of the front-end electronics for the ATLAS muon precision chamber (MDT) is presented. Especially, test results of a prototype TDC chip are described in detail. The chip was fabricated in a 0.3 mum CMOS Gate-Array technology. Measurements of critical elements of the chip such as the PLL, and data buffering circuits demonstrated adequate performance. The effect of gamma-ray irradiation, using a Co-60 source, and neutron irradiation, were also examined. The test results revealed radiation tolerance adequate for the operation of the circuits in the environment of the ATLAS MDT. Mounting of the front-end electronics to the MDT is scheduled to start in the year 2001. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:365 / 371
页数:7
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