Gas detection with a porous silicon based sensor

被引:51
作者
Baratto, C
Comini, E
Faglia, G
Sberveglieri, G
Di Francia, G
De Filippo, F
La Ferrara, V
Quercia, L
Lancellotti, L
机构
[1] Univ Brescia, Dipartimento Chim & Fis Ingn Mat, I-25123 Brescia, Italy
[2] Univ Brescia, INFM, I-25123 Brescia, Italy
[3] ENEA, CRIF, Ctr Ric Fotovoltaiche, I-80055 Portici, Italy
[4] INFM, Unita Napoli Mostra Doltremare Pad 20, I-80125 Naples, Italy
关键词
gas sensors; porous silicon; organic vapors;
D O I
10.1016/S0925-4005(99)00297-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Porous silicon (PS) layers with 60% porosity and 80 mu m thick were prepared from n-type silicon wafer. We present the sensitivity of PS photoluminescence to 250 ppm of carbon monoxide. Besides the variation of conductivity of the device due to presence of organic vapors such as chloroform, methanol, ethanol and toluene have been carried out. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:257 / 259
页数:3
相关论文
共 6 条
[1]  
BENCHORIN M, 1995, ANAL CHEM, V67, P3727
[2]   KINETIC OF THE GROWTH OF CHEMICALLY ETCHED POROUS SILICON [J].
DI FRANCIA, G ;
CITARELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3549-3551
[3]  
GUPTA PV, 1998, PHYS REV B, V37, P234
[4]   Photoluminescence quenching and the photochemical oxidation of porous silicon by molecular oxygen [J].
Harper, J ;
Sailor, MJ .
LANGMUIR, 1997, 13 (17) :4652-4658
[5]  
HENDRES HE, 1995, SENSOR ACTUAT B-CHEM, V23, P163
[6]   WO3 SPUTTERED THIN-FILMS FOR NOX MONITORING [J].
SBERVEGLIERI, G ;
DEPERO, L ;
GROPPELLI, S ;
NELLI, P .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :89-92