Gas detection with a porous silicon based sensor

被引：52

作者：

Baratto, C

Comini, E

Faglia, G

Sberveglieri, G

Di Francia, G

De Filippo, F

La Ferrara, V

Quercia, L

Lancellotti, L

机构：

[1] Univ Brescia, Dipartimento Chim & Fis Ingn Mat, I-25123 Brescia, Italy

[2] Univ Brescia, INFM, I-25123 Brescia, Italy

[3] ENEA, CRIF, Ctr Ric Fotovoltaiche, I-80055 Portici, Italy

[4] INFM, Unita Napoli Mostra Doltremare Pad 20, I-80125 Naples, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 65卷 / 1-3期

关键词：

gas sensors; porous silicon; organic vapors;

D O I：

10.1016/S0925-4005(99)00297-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Porous silicon (PS) layers with 60% porosity and 80 mu m thick were prepared from n-type silicon wafer. We present the sensitivity of PS photoluminescence to 250 ppm of carbon monoxide. Besides the variation of conductivity of the device due to presence of organic vapors such as chloroform, methanol, ethanol and toluene have been carried out. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：257 / 259

页数：3

共 6 条

[1]

BENCHORIN M, 1995, ANAL CHEM, V67, P3727

[2] KINETIC OF THE GROWTH OF CHEMICALLY ETCHED POROUS SILICON [J].