KINETIC OF THE GROWTH OF CHEMICALLY ETCHED POROUS SILICON

被引：10

作者：

DI FRANCIA, G

CITARELLA, A

机构：

[1] ENEA-CRIF Loc. Granatello, I-80055 Portici

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.358585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this communication we report the results of a systematic study on the formation of chemically etched porous silicon. Samples have been fabricated in HF/HNO3-based solutions for various etching times, using different molar concentrations of nitric acid. The growth of the porous layer has been studied by correlating film porosity and thickness to the etching time. Pore formation is shown to be more related to the surface morphology than to the etch characteristics. Preliminary results on photoluminescence measurements show that substrate morphology also play a major role in the luminescent behavior of chemically etched porous silicon. © 1995 American Institute of Physics.

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页码：3549 / 3551

页数：3

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