学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
THE FORMATION OF POROUS SILICON BY CHEMICAL STAIN ETCHES
被引:51
作者
:
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
BEALE, MIJ
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
BENJAMIN, JD
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
UREN, MJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1986年
/ 75卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(86)90082-5
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:408 / 414
页数:7
相关论文
共 7 条
[1]
ARCHER RJ, 1960, J PHYS CHEM SOLIDS, V12, P104
[2]
MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
BEALE, MIJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
CHEW, NG
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
UREN, MJ
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
CULLIS, AG
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
BENJAMIN, JD
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(01)
: 86
-
88
[3]
AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
BEALE, MIJ
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
BENJAMIN, JD
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
UREN, MJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(03)
: 622
-
636
[4]
A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
论文数:
0
引用数:
0
h-index:
0
IMAI, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(02)
: 159
-
&
[5]
SZE SM, 1983, VLSI TECHNOLOGY, P184
[6]
ON THE MECHANISM OF CHEMICALLY ETCHING GERMANIUM AND SILICON
TURNER, DR
论文数:
0
引用数:
0
h-index:
0
TURNER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(10)
: 810
-
816
[7]
ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON
UHLIR, A
论文数:
0
引用数:
0
h-index:
0
UHLIR, A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1956,
35
(02):
: 333
-
347
←
1
→
共 7 条
[1]
ARCHER RJ, 1960, J PHYS CHEM SOLIDS, V12, P104
[2]
MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
BEALE, MIJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
CHEW, NG
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
UREN, MJ
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
CULLIS, AG
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals & Radar, Establishment, Malvern, Engl, Royal Signals & Radar Establishment, Malvern, Engl
BENJAMIN, JD
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(01)
: 86
-
88
[3]
AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
论文数:
0
引用数:
0
h-index:
0
BEALE, MIJ
BENJAMIN, JD
论文数:
0
引用数:
0
h-index:
0
BENJAMIN, JD
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
UREN, MJ
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
[J].
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(03)
: 622
-
636
[4]
A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
论文数:
0
引用数:
0
h-index:
0
IMAI, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(02)
: 159
-
&
[5]
SZE SM, 1983, VLSI TECHNOLOGY, P184
[6]
ON THE MECHANISM OF CHEMICALLY ETCHING GERMANIUM AND SILICON
TURNER, DR
论文数:
0
引用数:
0
h-index:
0
TURNER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(10)
: 810
-
816
[7]
ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON
UHLIR, A
论文数:
0
引用数:
0
h-index:
0
UHLIR, A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1956,
35
(02):
: 333
-
347
←
1
→