PHOTOLUMINESCENCE AND FORMATION MECHANISM OF CHEMICALLY ETCHED SILICON

被引：112

作者：

SHIH, S

JUNG, KH

HSIEH, TY

SARATHY, J

CAMPBELL, JC

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期

关键词：

D O I：

10.1063/1.107162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoluminescence (PL) from Si chemically etched (CE) in HF-HNO3-based solution has been observed. Scanning electron microscopy reveals that the etched Si has a surface morphology similar to that of luminescent porous Si fabricated by conventional anodization. PL spectra show an order of magnitude smaller luminescent intensity and a shorter wavelength intensity peak for CE Si. A CE Si thickness limitation was observed. The formation of CE Si can be readily explained by a local anodization model.

引用

页码：1863 / 1865

页数：3

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