DEMONSTRATION OF PHOTOLUMINESCENCE IN NONANODIZED SILICON

被引：94

作者：

SARATHY, J ^{[1
]}

SHIH, S ^{[1
]}

JUNG, K ^{[1
]}

TSAI, C ^{[1
]}

LI, KH ^{[1
]}

KWONG, DL ^{[1
]}

CAMPBELL, JC ^{[1
]}

YAU, SL ^{[1
]}

BARD, AJ ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of photoluminescent porous Si in an etchant solution made from the HF-HNO3-CH3COOH system is reported. The porous Si is characterized on the basis of its photoluminescence (PL) spectra and the degradation of the PL during exposure to laser irradiation. The surface topography as characterized by atomic force microscopy (AFM) reveals features on the order of 400-600 angstrom. The effect of annealing the porous Si in vacuum on the PL intensity is described and correlated to the breakdown of Si-H bonds on the porous Si surface.

引用

页码：1532 / 1534

页数：3

共 9 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].