Carbon onions formation by high-dose carbon ion implantation into copper and silver

被引：68

作者：

Cabioc'h, T ^{[1
]}

Jaouen, M ^{[1
]}

Thune, E ^{[1
]}

Guérin, P ^{[1
]}

Fayoux, C ^{[1
]}

Denanot, MF ^{[1
]}

机构：

[1] Univ Poitiers, Met Phys Lab, UMR 6630 CNRS, F-86962 Futuroscope, France

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 128卷

关键词：

ion implantation; nanostructures; carbon; fullerenes;

D O I：

10.1016/S0257-8972(00)00655-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-fluence (> 10(16) cm(-2)) ion implantations of 120-keV carbon ions have been performed at elevated temperature (greater than or equal to 400 degrees C) into metals (Ag, Cu) in which carbon is almost immiscible. The different carbon structures so synthesized have been characterized by transmission electron microscopy and atomic force microscopy. It mainly results in the formation of numerous carbon onions composed of concentric graphitic layers. We will show that pure carbon onion layers can even be obtained by carbon ion implantation into a silver thin film deposited onto silica. Furthermore, we discuss the potential of the technique in adjusting the size and controlling the microstructure of the carbon onions by varying implantation parameters such as temperature and fluence. We also briefly discuss the nucleation and growth mechanisms of the carbon onions during the ion implantation process. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：43 / 50

页数：8

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