Effect of O2 addition on the deposition of Pt thin films by metallorganic chemical vapor deposition

Platinum thin films were deposited on SiO2/Si substrates at a deposition temperature of 325 degrees C by metallorganic chemical vapor deposition using Pt-hexafluoroacetylacetonate as a precursor. It was found that the addition of the proper amount of O-2 gas was essential to deposit high-quality Pt thin films. Dense Pt thin films with smooth surfaces and high electrical conductivity were deposited above a critical O-2 flow rate of 50 seem. The introduction of O-2 gas made the Pt films partially oxidized, resulting in the reduction of their surface and grain boundary energy. Therefore, wettability of the Pt thin films on SiO2/Si was improved and the grain growth of the films by a postdeposition annealing was suppressed as the addition of O-2 was increased during the deposition.